PART |
Description |
Maker |
EDI2CG27264V85D1 |
2x64Kx72, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏,8.5ns,同同步突发静态存储器模块x64Kx72.3伏,8.5ns,同同步脉冲静态内存模块)
|
ZETTLER electronics GmbH
|
EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V- |
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏,10纳秒,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?) SSRAM Modules
|
Bourns, Inc. Electronic Theatre Controls, Inc.
|
GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
GS88136BD-200I GS88136BD-133I GS88136BD-150 GS8813 |
200MHz 6.5ns 256K x 36 9Mb sync burst SRAM 133MHz 8.5ns 256K x 36 9Mb sync burst SRAM 150MHz 7.5ns 256K x 36 9Mb sync burst SRAM 166MHz 7ns 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|
EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,15纳秒,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,12ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,纳秒,同同步脉冲静态内存模块(流通结构) SSRAM Modules 的SSRAM模块 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM 150MHz 10ns 128K x 32 4Mb sync burst SRAM 166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V9 |
2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM
|
WEDC[White Electronic Designs Corporation]
|
WT9051 |
SYNC signal processor for Multi-Sync display
|
Weltrend
|
TDA9535 |
9.5NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
GS8160F32T-6I GS8160F18T-8.5 GS8160F36T-8.5I GS816 |
6ns 512K x 32 18MB synchronous burst SRAM 8.5ns 1M x 18 18MB synchronous burst SRAM 8.5ns 512K x 36 18MB synchronous burst SRAM 8.5ns 512K x 32 18MB synchronous burst SRAM
|
GSI Technology
|
CY7C4261V CY7C4271V 7C4291V CY7C4271V-25JC CY7C426 |
128K x 9 low voltage Deep Sync FIFO, 15ns 64K x 9 low voltage Deep Sync FIFO, 25ns 64K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 25ns 32K x 9 low voltage Deep Sync FIFO, 15ns 16K x 9 low voltage Deep Sync FIFO, 15ns 32K x 9 low voltage Deep Sync FIFO, 25ns From old datasheet system 16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs
|
Cypress
|
A43L0616AV-5.5 |
5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|